BFU760F transistor equivalent, wideband silicon germanium rf transistor.
* Low noise high linearity RF transistor
* High maximum output third-order intercept point 32 dBm at 1.8 GHz
* 110 GHz fT silicon germanium technology
1.3 Ap.
in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Obs.
Image gallery
Download